MMIX1H60N150V1 - 1500V MOS Gated Thyristor w/ Diode || MMIX1H60N150V1 - Quad Industry GmbH

Артикул: MMIX1H60N150V1
Наименование: 1500V MOS Gated Thyristor w/ Diode || MMIX1H60N150V1
Производитель: IXYS


Product Detail

Part Num: MMIX1H60N150V1 DataSheet
Description: POWER DEVICES >, THYRISTOR DISCRETES >, MOS Gated Thyristor >, 1500V MOS Gated Thyristor w/ Diode
Configuration: Copack (FRED)
Package Style: SMPD
Status: Active Part
Division: IXYS POWER
Support Docs: Product Advertisement, Product Brief, Product Overview Presentation

Recommended Alternatives Competing Parts
Parameter
MMIX1H60N150V1
VRRM, VDRM, (V) 1500
ITSM, 1µs, TVJ = 25°C, (kA) 32.0
ITSM, 10µs, TVJ = 25°C, (kA) 11.8
VT0, max, (V) 6
rT, typ, (mOhm) 1.20
RthJC, max, (?C/W) 0.28
RthJC, Diode, max, (?C/W) 0.50
Package Style SMPD


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