MwT-LN180 - Low Noise pHEMT Devices || MwT-LN180 - Quad Industry GmbH
Артикул: MwT-LN180
Наименование: Low Noise pHEMT Devices || MwT-LN180
Производитель: IXYS
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Part Num: | MwT-LN180 DataSheet | Description: | RF POWER >, RF MOSFETs >, GaAs FETs/pHEMTs/HFETs >, Low Noise pHEMT Devices | Status: | Active Part | | Recommended Alternatives | Competing Parts | Gate, Width, Length, (um) | 180/.15 | Gate, Layout | - | Gate, Drain, Bond, Pads ,(Qty) | - | Chip, Thick, & VIA, Hole, (mil, y/n) | - | S.S Gain, @12GHz, Typ/Min, (dB) | - | N.F. @,12GHz, Typ/Max, (dB) | 0.50 | Ga@N.F.,@12GHz, Typ/Min, (dB) | 10/- | P-1dB@,12GHz, Typ/Min, (dBm) | 16.0 | Nominal, Chip Size, (um•um) | - | Ideal, Circuit | - | Package Style | | | |
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