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IXFN102N30P - (100V to 300V) Polar™ HiPerFETs with reduced Rds(on) || IXFN102N30P - Quad Industry GmbH

Артикул: IXFN102N30P
Наименование: (100V to 300V) Polar™ HiPerFETs with reduced Rds(on) || IXFN102N30P
Производитель: IXYS


Product Detail

Part Num: IXFN102N30P DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (100V to 300V) Polar™ HiPerFETs with reduced Rds(on)
Configuration: Single
Package Style: SOT-227
Status: Active Part

Recommended Alternatives Competing Parts
Parameter
IXFN102N30P
VDSS, Max, (V) 300
ID(cont), TC=25°C, (A) 86
RDS(on), max, TJ=25°C, (?) 0.0330
Ciss, Typ, (pF) 7500
Qg, Typ, (nC) 224
trr, Typ, (ns) -
trr, Max, (ns) 200
PD, (W) 570
RthJC, Max, (?C/W) 0.22
Package Style SOT-227


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