ÃëàâíàÿÊàòàëîãixysPOWER DEVICESDISCRETE MOSFETsN-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
 

IXFN30N110P - (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFN30N110P - Quad Industry GmbH

Àðòèêóë: IXFN30N110P
Íàèìåíîâàíèå: (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFN30N110P
Ïðîèçâîäèòåëü: IXYS


Product Detail

Part Num: IXFN30N110P DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on)
Configuration: Single
Package Style: SOT-227B
Status: Phase out/Obsolete: Contact the factory for availability and last time buys.

Recommended Alternatives Competing Parts
Parameter
IXFN30N110P
VDSS, Max, (V) 1100
ID(cont), TC=25°C, (A) 25
RDS(on), max, TJ=25°C, (?) 0.36
Ciss, Typ, (pF) 13600
Qg, Typ, (nC) 235
trr, Typ, (ns) -
trr, Max, (ns) 300
PD, (W) 695
RthJC, Max, (?C/W) 0.18
Package Style SOT-227B


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