ГлавнаяКаталогixysPOWER DEVICESDISCRETE MOSFETsN-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
 

IXFH26N50P - (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFH26N50P - Quad Industry GmbH

Артикул: IXFH26N50P
Наименование: (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on) || IXFH26N50P
Производитель: IXYS


Product Detail

Part Num: IXFH26N50P DataSheet
Description: POWER DEVICES >, DISCRETE MOSFETs >, N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) >, (500V to 1200V) Polar™ HiPerFETs with reduced Rds(on)
Configuration: Single
Package Style: TO-247
Status: Active Part

Recommended Alternatives Competing Parts
Parameter
IXFH26N50P
VDSS, Max, (V) 500
ID(cont), TC=25°C, (A) 26
RDS(on), max, TJ=25°C, (?) 0.23
Ciss, Typ, (pF) 3600
Qg, Typ, (nC) 60
trr, Typ, (ns) -
trr, Max, (ns) 200
PD, (W) 400
RthJC, Max, (?C/W) 0.31
Package Style TO-247


Назад в раздел